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This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated

Demonstration of (In, Ga)N/GaN Core–Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars