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The lattice mismatch between interesting 2D materials and commonly available3D substrates is one of the obstacles in the epitaxial growth of monolithic2D/3D heterostructures, but a number of 2D materials have not yet beenconsidered for epitaxy. Here we present the first molecular beam epitaxy growthof NiTe$_{2}$ 2D transition metal dichalcogenide. Importantly, the growth isrealized on a nearly lattice matched GaAs(111)B substrate. Structuralproperties of the grown layers are investigated by electron diffraction, X-raydiffraction, and scanning tunnelling microscopy. Surface coverage and atomicscale order is evidenced by images obtained with atomic force, scanningelectron, and transmission electron microscopy. Basic transport properties weremeasured confirming that NiTe$_{2}$ layers are metallic, with the Hallconcentration of $10^{20}$cm$^{-3}$ to $10^{23}$cm$^{-3}$, depending on thegrowth conditions.

Molecular Beam Epitaxy of a 2D material nearly lattice matched to a 3D substrate: $NiTe_{2}$ on $GaAs$