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Strain engineering vanadium dioxide thin films is one way to alter thismaterial's characteristic first order transition from semiconductor to metal.In this study we extend the exploitable strain regime by utilizing the verylarge lattice mismatch of 8.78 % occurring in the VO$_2$/RuO$_2$ system alongthe c axis of the rutile structure. We have grown VO$_2$ thin films on singledomain RuO$_2$ islands of two distinct surface orientations by atomicoxygen-supported reactive MBE. These films were examined by spatially resolvedphotoelectron and x-ray absorption spectroscopy, confirming the correctstoichiometry. Low energy electron diffraction then reveals the VO$_2$ films togrow indeed fully strained on RuO$_2$(110), exhibiting a previously unreported($2\times2$) reconstruction. On TiO$_2$(110) substrates, we reproduce thisreconstruction and attribute it to an oxygen-rich termination caused by thehigh oxygen chemical potential. On RuO$_2$(100) on the other hand, the filmsgrow fully relaxed. Hence, the presented growth method allows for simultaneousaccess to a remarkable strain window ranging from bulk-like structures tomassively strained regions.

Massively strained VO2 thin film growth on RuO2