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Over the last few years, a new mode for imaging in the scanning transmissionelectron microscope (STEM) has gained attention as it permits the directvisualization of sample conductivity and electrical connectivity. When theelectron beam (e-beam) is focused on the sample in the STEM, secondaryelectrons (SEs) are generated. If the sample is conductive and electricallyconnected to an amplifier, the SE current can be measured as a function of thee-beam position. This scenario is similar to the better-known scanning electronmicroscopy (SEM)-based technique, electron beam induced current (EBIC) imagingexcept the signal in STEM is generated by the emission of SEs, hence the nameSEEBIC, and in this case the current flows in the opposite direction. Here, weprovide a brief review of recent work in this area, examine the variouscontrast generation mechanisms associated with SEEBIC, and illustrate its usefor the characterization of graphene nanoribbon devices.

Contrast mechanisms in secondary electron e-beam induced current (SEEBIC) imaging