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The recent development of electron sensitive and pixelated detectors hasattracted the use of four-dimensional scanning transmission electron microscopy(4D-STEM). Here, we present a precession electron diffraction assisted 4D-STEMtechnique for automated orientation mapping using diffraction spot patternsdirectly captured by an in-column scintillator based complementarymetal-oxide-semiconductor (CMOS) detector. We compare the results to aconventional approach, which utilizes a fluorescent screen filmed by anexternal CCD camera. The high dynamic range and signal-to-noise characteristicsof the detector largely improve the image quality of the diffraction patterns,especially the visibility of diffraction spots at high scattering angles. Inthe orientation maps reconstructed via the template matching process, the CMOSdata yields a significant reduction of false indexing and higher reliabilitycompared to the conventional approach. The angular resolution of misorientationmeasurement could also be improved by masking reflections close to the directbeam. This is because the orientation sensitive, weak and small diffractionspots at high scattering angle are more significant. The results show that finedetails such as nanograins, nanotwins and sub-grain boundaries can be resolvedwith a sub-degree angular resolution which is comparable to orientation mappingusing Kikuchi diffraction patterns.

microscopy and microanalysis

Automated crystal orientation mapping by precession electron diffraction  assisted four-dimensional scanning transmission electron microscopy (4D-STEM)  using a scintillator based CMOS detector