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We report on the synthesis and characterization of nanocrystalline delta-MoNby crystallization of amorphous thin films grown on (100) Si by reactivesputtering at room temperature. Films with chemical composition MoN were grownusing a deposition pressure of 5mTorr with a reactive mixture ofAr/(Ar+N2)=0.5. The as-grown films display mostly amorphous structure.Nanocrystalline delta-MoN phase is obtained after annealing at temperaturesabove 600 {\deg}C. The superconducting critical temperature Tc depends on filmthickness. Thick films (170 nm) annealed at 700 {\deg}C for 30 min display a Tc= 11.2 K (close to the one reported for bulk specimens: 13 K), which isgradually suppressed to 7.2 K for 40 nm thick delta-MoN films. Our resultsprovide a simple method to synthesize superconducting nitride thin films onsilicon wafers with Tc above the ones observed for conventional superconductorssuch as Nb.

Synthesis of nanocrystalline d-MoN by thermal annealing of amorphous thin films grown on (100) Si by reactive DC sputtering at room temperature