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Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition(ALD) at 250 {\deg}C on both Si and TiN substrates. The ALD growth producesCeO2 films with polycrystalline cubic phase on both substrates. However, thefilms show a preferential orientation along <200> crystallographic directionfor CeO2/Si or <111> for CeO2/TiN, as revealed by X-ray diffraction.Additionally, CeO2 films differ in interface roughness depending on thesubstrate. Furthermore, the relative concentration of Ce3+ is 22.0% in CeO2/Siand around 18% in CeO2/TiN, as obtained by X-ray photoelectron spectroscopy(XPS). Such values indicate a ~10% off-stoichiometry and are indicative of thepresence of oxygen vacancies in the films. Nonetheless, CeO2 bandgap energy andrefractive index at 550 nm are 3.54+/-0.63 eV and 2.3 for CeO2/Si, and3.63+/-0.18 eV and 2.4 for CeO2/TiN, respectively. Our results extend theknowledge on the structural and chemical properties of ALD-deposited CeO2either on Si or TiN substrates, underlying films differences and similarities,thus contributing to boost the use of CeO2 through ALD deposition as foreseenin a wide number of applications.

Structural, Chemical and Optical Properties of Cerium Dioxide Film Prepared by Atomic Layer Deposition on TiN and Si Substrates