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Quantification of Ge in Si1-xGex structures (0.092<x<0.78) was carried bytime-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gassecondary neutral mass spectrometry (SNMS). A good linear correlation(R2>0.9997) of intensity ratios of GeCs2+/SiCs2+ and 74Ge-/30Si- secondary ionsand post-ionized 70Ge+/28Si+ sputtered neutrals with Ge concentration wasobtained. The calibration data were used for quantitative depth profiling of[10x(12.3 nm Si0.63Ge0.37/34 nm Si)] structures on Si. Satisfactory complianceof the quantified Ge concentration in SiGe layers with the data measured byhigh-resolution X-ray diffraction was obtained for both techniques. Both SIMSand SNMS experimental profiles were fitted using the Hofmannmixing-roughness-information depth (MRI) model. In case of TOF-SIMS the qualityof the reconstruction was higher than for SNMS since not only the progressingroughening, but also crater effect and other processes unaccounted in the MRIsimulation could have significant impact on plasma sputter depth profiling.

Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry