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Crystalline Si substrates are doped by laser annealing of solution processedSi. For this experiment, dispersions of highly B-doped Si nanoparticles (NPs)are deposited onto intrinsic Si and laser processed using an 807.5nm cw-laser.During laser processing the particles as well as a surface-near substrate layerare melted to subsequently crystallize in the same orientation as thesubstrate. The doping profile is investigated by secondary ion massspectroscopy revealing a constant B concentration of 2x10^18 cm^-3 throughoutthe entire analyzed depth of 5\mu m. Four-point probe measurements demonstratethat the effective conductivity of the doped sample is increased by almost twoorders of magnitude. The absolute doping depth is estimated to be in between8\mu m and 100\mu m. Further, a pn-diode is created by laser doping an n-typec-Si substrate using the Si NPs.

Laser-Doping of Crystalline Silicon Substrates using Doped Silicon Nanoparticles