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Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111)substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is foundto be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Sisubstrates. With a single-step high temperature growth, second phase clustersare formed at an early stage. On the other hand, with low temperature growth,the film tends to be disordered even in the absence of a second phase. With alow temperature initial growth followed by a high temperature growth,second-phase-free atomically sharp interface is obtained between Bi2Se3 and Sisubstrate, as verified by RHEED (Reflection High Energy Electron Diffraction),TEM (Transmission Electron Microscopy) and XRD (X-Ray Diffraction). The latticeconstant of Bi2Se3 is observed to relax to its bulk value during the firstquintuple layer according to RHEED analysis, implying the absence of strainfrom the substrate. TEM shows a fully epitaxial structure of Bi2Se3 film downto the first quintuple layer without any second phase or an amorphous layer.

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface