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Chromia (Cr2O3) has been extensively explored for the purpose of developingwidespread industrial applications, owing to the convergence of a variety ofmechanical, physical and chemical properties in one single oxide material.Various methods have been used for large area synthesis of Cr2O3 films.However, for selective area growth and growth on thermally sensitive materials,laser-assisted chemical vapour deposition (LCVD) can be applied advantageously.Here we report on the growth of single layers of pure Cr2O3 onto sapphiresubstrates at room temperature by low pressure photolytic LCVD, using UV laserradiation and Cr(CO)6 as chromium precursor. The feasibility of the LCVDtechnique to access selective area deposition of chromia thin films isdemonstrated. Best results were obtained for a laser fluence of 120 mJ cm-2 anda partial pressure ratio of O2 to Cr(CO)6 of 1.0. Samples grown with theseexperimental parameters are polycrystalline and their microstructure ischaracterised by a high density of particles whose size follows a lognormaldistribution. Deposition rates of 0.1 nm s-1 and mean particle sizes of 1.85{\mu}m were measured for these films.

Cr2O3 thin films grown at room temperature by low pressure laser chemical vapour deposition