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A deep level transient spectroscopy (DLTS) study of defects created bylow-fluence, low-energy ion implantation for development of ion-implantedsilicon field-effect transistors for spin-dependent transport experiments ispresented. Standard annealing strategies are considered to activate theimplanted dopants and repair the implantation damage in testmetal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interfacetrapped charge and the role of minority carriers in DLTS are investigated. Afurnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did notrepair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapidthermal anneal. No evidence of bulk traps was observed after either of theseanneals. The ion- implanted spin-dependent transport device is shown to haveexpected characteristics using the processing strategy determined in thisstudy.

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport