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The formation of various uncommon shaped voids along with regular triangularand square voids in the epitaxial 3C-SiC films on Si has been investigated byoptical microscopy and atomic force microscopy. Heteroepitaxial growth of3C-SiC films on Si (001) and (111) substrates has been performed usinghexamethyldisilane in a resistance-heated chemical vapor deposition reactor.The influence of the orientation of the Si substrate in determining the shapeof the voids has clearly been observed. In addition, the growth period and thegrowth-temperature have been considered as the major parameters to control thesize, density and shape of the voids. Generally, voids are faceted along {111}planes, but depending upon growth conditions, other facets with higher surfaceenergy have also been observed. Finally the size and density of the voids areremarkably reduced, by suitable growth technique.

thin solid films

An atomic force microscopy and optical microscopy study of various  shaped void formation and reduction in 3C-SiC films grown on Si using  chemical vapor deposition