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The morphological evolution of hillocks at the unpassivated sidewalls of thesingle crystal metallic thin films is investigated via computer simulations byusing the free-moving boundary value problem. The effects of thedrift-diffusion anisotropy on the development of surface topographicalscenarios is fully explored under the action of electromigration and capillaryforces, utilizing numerous combination of the surface texture, thedrift-diffusion anisotropy and the direction of the applied electric field. Thepresent simulation studies yield very rich and technologically importedinformation, in regards to the critical texture of the single crystal thin filmsurfaces, and the intensity and the orientation of the applied electric field,as far as the device reliability is concerned.

Morphological evolution of edge-hillocks on single crystal films having anisotropic drift-diffusion under the capillary and electromigration forces