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Radiative and non-radiative charge carrier recombination in thin-film diodesplays a key role in determining the efficiency of electronic devices made ofnext generation semiconductors such as organic, perovskite and nanocrystals. Inthis work, we show that lowering the bulk recombination does not necessarilyresult in enhanced performance metrics of electronic devices. From theperspective of charge carrier extraction and injection, the radiative limit ofthe open-circuit voltage of solar cells, noise current of photodetectors andlasing threshold of injection lasers cannot be improved if the contacts are notperfectly selective. A numerical drift-diffusion model is used to investigatethe interplay between bulk recombination and surface recombination of minoritycarriers at the contacts in bipolar thin diode devices based on low-mobilitysemiconductors. The surface recombination becomes prominent in case of reducedbulk recombination strengths when non-selective contacts, i. e. contacts thatare either metallic or have imperfect charge-selective interlayer, areemployed. Finally, we derive analytical approximations for the case whendiffusion-limited surface recombination of minority carriers at Ohmic contactsdominates the dark current. These results indicate that having perfectlyselective contacts becomes crucial in systems with suppressed bulkrecombination - a challenging requirement for future state-of-the-art thin-filmsolar cells, light-emitting devices and photodetectors made of next generationsemiconductors.

On the effect of surface recombination in thin film solar cells, light emitting diodes and photodetectors