English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

In this review we discuss spin and charge transport properties ingraphene-based single-layer and few-layer spin-valve devices. We give anoverview of challenges and recent advances in the field of device fabricationand discuss two of our fabrication methods in more detail which result indistinctly different device performances. In the first class of devices, Co/MgOelectrodes are directly deposited onto graphene which results in roughMgO-to-Co interfaces and favor the formation of conducting pinholes throughoutthe MgO layer. We show that the contact resistance area product (R$_c$A) is abenchmark for spin transport properties as it scales with the measured spinlifetime in these devices indicating that contact-induced spin dephasing is thebottleneck for spin transport even in devices with large R$_c$A values. In asecond class of devices, Co/MgO electrodes are first patterned onto a siliconsubstrate. Subsequently, a graphene-hBN heterostructure is directly transferredonto these prepatterned electrodes which provides improved interfaceproperties. This is seen by a strong enhancement of both charge and spintransport properties yielding charge carrier mobilities exceeding 20000cm$^2$/(Vs) and spin lifetimes up to 3.7 ns at room temperature. We discussseveral shortcomings in the determination of both quantities which complicatesthe analysis of both extrinsic and intrinsic spin scattering mechanisms.Furthermore, we show that contacts can be the origin of a second chargeneutrality point in gate dependent resistance measurements which is influencedby the quantum capacitance of the underlying graphene layer.

Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes