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We present a study of the rubidium adsorption on the Si(111)-(7x7) surfaceand the related Rb-induced reconstructions as a function of depositiontemperature and Rb-coverage via scanning tunneling microscopy (STM) andlow-energy electron diffraction (LEED). Sample analysis via LEED allowed toobserve for the first time a Rb/Si(111)-(6x1) reconstruction. The STM imageanalysis allowed to obtain the first real space characterization of theRb/Si(111)-(3x1) surface. In addition, STM provided a direct and localinformation on the surface arrangement as well as further insights on theinteraction between Si and Rb atoms and on the growth dynamics.

Rb-induced (3x1) and (6x1) reconstructions on Si(111)-(7x7): A LEED and STM study