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We perform spatial point analysis of InAs quantum dot nucleation sites andsurface reconstruction domain pattern on an InAs wetting layer, giving insightsfor quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5monolayers in thickness on a GaAs(001) substrate has been observed at 300 degCby using in situ scanning tunneling microscopy. The surface exhibits(1x3)/(2x3) and (2x4) reconstruction domains. A nearest-neighbor analysis findsthat point pattern of quantum dot precursors was more similar to that of(1x3)/(2x3) domains which are specific to Ga-rich region. This provides theevidence that InAs quantum dot nucleation is induced by Ga-rich fluctuationwithin an InAs wetting layer.

Spatial Point Analysis of Quantum Dot Nucleation Sites on InAs Wetting Layer