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Doping of semiconductor is necessary for various device applications.Exploiting chemistry at its reactive edges was shown to be an effective way todope an atomically thin graphene nanoribbon (GNR) for realizing new devices inrecent experiments. The carrier mobility limited by edge doping is studied as afunction of the GNR width, doping density, and carrier density by using abinitio density functional and parameterized tight binding simulations combinedwith the non-equilibrium Green's function formalism for quantum transport. Theresults indicate that for GNRs wider than about 4nm, the mobility scalesapproximately linearly with the GNR width, inversely proportional to the edgedoping concentration and decreases for an increasing carrier density. Fornarrower GNRs, dependence of the mobility on the GNR width and carrier densitycan be qualitatively different.

Effects of edge chemistry doping on graphene nanoribbon mobility