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We studied the low temperature (T<130K) growth of Ag on Si(001) and Si(111)flat surfaces prepared by Si homo epitaxy with the aim to achieve thin metallicfilms. The band structure and morphology of the Ag overlayers have beeninvestigated by means of XPS, UPS, LEED, STM and STS. Surprisingly a(root3xroot3)R30^o LEED structure for Ag films has been observed afterdeposition of 2-6 ML Ag onto a Si(111)(root3xroot3)R30^o Ag surface at lowtemperatures. XPS investigations showed that these films are solid, and UPSmeasurements indicate that they are metallic. However, after closer STM studieswe found that these films consists of sharp Ag islands and (root3xroot3)R30^oAg flat terraces in between. On Si(001) the low-temperature deposition yieldsan epitaxial growth of Ag on clean Si(001)2x1 with a twinned Ag(111) structureat coverages as low as 10 ML. Furthermore the conductivity of few monolayer Agfilms on Si(100) surfaces has been studied as a function of temperature (40-300K).

Electron and lattice structure of ultra thin Ag films on Si(111) and Si(001)