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We invented a novel method to fabricate graphene transistors on oxidizedsilicon wafers without the need to transfer graphene layers. By means ofcatalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphenetransistors (BiLGFETs) are realized directly on oxidized silicon substrate,whereby the number of stacked graphene layers is determined by the selectedCCVD process parameters, e.g. temperature and gas mixture. BiLGFETs exhibitultra-high on/off-current ratios of 107 at room temperature, exceedingpreviously reported values by several orders of magnitude. This will allow asimple and low-cost integration of graphene devices for digital nanoelectronicapplications in a hybrid silicon CMOS environment for the first time.

Transfer-free Grown Bilayer Graphene Transistors for Digital Applications