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We investigated electroforming-free bipolar resistive switching behavior inPt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturallyformed on Al in air. Various compliance current values for the junction's setswitching successfully lead to various resistance values in its low resistancestate, suggesting the possibility for multi-level-operation. A mechanism forthe bipolar switching is qualitatively discussed in terms of the modulation ofthe tunnel barrier by the reactive Ti layer on top of the barrier.

Pt/Ti/Al2O3/Al tunnel junctions showing electroforming-free bipolar resistive switching behavior