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The electronic and the optical properties of metallic nitride (MN) monolayersare studied using a DFT formalism. In most of these monolayers, the electrondensity of the metallic atoms is much higher than that of the nitride atoms,and ionic, covalent, and metallic bonds are found in M-N bonds, resulting infascinating electronic and optical properties. The optical band gap is variedfrom almost $0.0$ to $3.0$~eV for the MN monolayers depending on the bond typebetween the metallic and the nitride atoms, as well as the contribution of thetype of orbitals around the Fermi energy. The optical properties such as thedielectric function, the excitation spectra, the refractive index, thereflectivity, and the optical conductivity of MN monolayers are calculated. Theexcitation energy and static dielectric constant are found to be inverselyproportional to the band gap at low photon energy. The MN monolayers with alarge band gap have good visible light functionality, while the MN monolayerswith a lower band gap are found to be active in the infrared region.Furthermore, it is shown that the optical properties of MN monolayers show astrong anisotropy with respect to the polarization of the incoming light.Consequently, our results for the optical properties of MN monolayers show thatthey could be beneficial in optoelectronic device applications.

Electronic and Optical properties of Metallic Nitride: A comparative study between the MN (M=Al, Ga, In, Tl) monolayers