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The temperature effect of quantum interference on resistivity is examined inmonolayer graphene, with experimental results showing that the amplitude of theconductance fluctuation increases as temperature decreases. We find that thisbehavior can be attributed to the decrease in the inelastic scattering(dephasing) rate, which enhances the weak localization (WL) correction toresistivity. Following a previous report that explained the relationshipbetween the universal conductance fluctuation (UCF) and WL regarding the gatevoltage dependence (D. Terasawa, et al., Phys. Rev. B 95 125427 (2017)), wepropose that the temperature dependence of the UCF in monolayer graphene can beinterpreted by the WL theory.

Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene