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2H-TaSe2 is a model transition metal dichalcogenide material that developscharge density waves (CDWs).Here we present variable-temperature Ramanspectroscopy study on both incommensurate charge density waves (ICDW) andoptical phonon modes of 2H-TaSe2 thin layers exfoliated onto SiO2 substrate.Raman scattering intensities of all modes reach a maximum when the samplethickness is about 11 nm. This phenomenon can be explained by opticalinterference effect between the sample and the substrate. The E2gICDW amplitudemodes experience redshift as temperature increases. We extract ICDW transitiontemperature (TICDW) from temperature dependence of the frequency of E2gICDWmode. We find that TICDW increases in thinner flakes,which could be due to aresult of significantly enhanced electron-phonon interactions. Our results openup a new window for search and control of CDW of two-dimensional matter.

Raman spectroscopy of optical phonon and incommensurate charge density wave modes in 2H-TaSe2 exfoliated flakes