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We propose an engineering of the optical properties of GaAs/AlGaAs quantumwells using AlAs and InAs monolayer insertions. A quantitative study of theeffects of the monolayer position and the well thickness on the interband andintersubband transitions, based on the extended-basis sp3d5s* tight-bindingmodel, is presented. The effect of insertion on the interband transitions iscompared with existing experimental data. As for intersubband transitions, weshow that in a GaAs/AlGaAs quantum well including two AlAs and one InAsinsertions, a three level {e1 , e2 , e3 } system where the transition energye3-e2 is lower and the transition energy e2-e1 larger than the longitudinaloptical phonon energy (36 meV) can be engineered together with a e3-e2transition energy widely tunable through the TeraHertz range.

Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges