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Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in thestudy of quantum transport in nanostructures, but charge fluctuationsassociated with remote ionized dopants often produce deleterious effects.Electric field-induced carrier systems offer an attractive alternative ifcertain challenges can be overcome. We demonstrate a field-effect transistor inwhich the active channel is locally devoid of modulation-doping, but silicondopant atoms are retained in the ohmic contact region to facilitate reliablelow-resistance contacts. A high quality two-dimensional electron gas is inducedby a field-effect and is tunable over a wide range of density. Device design,fabrication, and low temperature (T= 0.3K) transport data are reported.

Field-effect-induced two-dimensional electron gas utilizing modulation doping for improved ohmic contacts