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In this work, we performed tight binding calculations of the electronicstructure of III-V semiconductors compounds and their alloys based on theExtended H\"uckel Theory (EHT), where the H\"uckel parameters for the binarycompounds were generated following a simulated annealing procedure. Inparticular, this article is focused on the dependency between band gap and theapplied pressure and also the alloy composition.

An Extended H\"uckel Study of the Electronic Properties of III-V Compounds and Their Alloys