English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

The density-of-states at the Fermi energy, $N(E_F)$, is low in dopedsuperconducting semiconductors and high-$T_C$ cuprates. This contrasts with thecommon view that superconductivity requires a large electron-boson coupling$\lambda$ and therefore also a large $N(E_F)$. However, the generic Fermisurfaces (FS) of these systems are relatively simple.  Here is presented arguments showing that going from a 3-dimensionalmulti-band FS to a 2-dimensional and simple FS is energetically favorable tosuperconductivity. Nesting and few excitations of bosons compensate for a low$N(E_F)$. The typical behavior of the 2-dimensional FS for cuprates, and small3-dimensional FS pockets in doped semiconductors and diamond, leads to $T_C$variations as a function of doping in line with what has been observed. Diamondis predicted to attain higher $T_C$ from electron doping than from hole doping,while conditions for superconductivity in Si and Ge are less favorable. Ahigh-$T_C$ material should ideally have few flat and parallel FS sheets with areasonably large $N(E_F)$.

Theoretical aspects of simple and nested Fermi surfaces for superconductivity in doped semiconductors and high-$T_C$ cuprates