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Spatial distribution of local tunneling conductivity was investigated fordeep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulombinteraction and interference effects were taken into account and analyzedtheoretically with the help of Keldysh formalism. Two models were investigated:mean field self-consistent approach for shallow impurity state and Hubbard-{I}model for deep impurity state. We have found that not only above the impuritybut also at the distances comparable to the lattice period both effectsinterference between direct and resonant tunneling channels and on-site Coulombrepulsion of localized electrons strongly modifies form of tunnelingconductivity measured by the scanning tunneling microscopy/spectroscopy(STM/STS).

solid state communications

Spatial distribution of local tunneling conductivity due to interference  and Coulomb interaction effects for deep and shallow impurities on  semiconductor surfaces