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We demonstrate top-gated field effect transistor made of reduced grapheneoxide (RGO) monolayer (graphene) by dielectrophoresis. Raman spectrum of RGOflakes of typical size of 5{\mu}m x 5{\mu}m show a single 2D band at 2687 cm-1,characteristic of a single layer graphene. The two probe current - voltagemeasurements of RGO flakes, deposited in between the patterned electrodes witha gap of 2.5 {\mu}m using a.c. dielectrophoresis show ohmic behavior with aresistance of ~ 37k{\Omega}. The temperature dependence of the resistance (R)of RGO measured between temperatures 305 K to 393 K yields temperaturecoefficient of resistance [dR/dT]/R ~ -9.5x10-4 K-1, same as mechanicallyexfoliated single layer graphene. The field effect transistor action wasobtained by electrochemical top-gating using solid polymer electrolyte (PEO +LiClO4) and Pt wire. Ambipolar nature of graphene flakes is observed upto adoping level of ~ 6x1012/cm2 and carrier mobility of ~ 50 cm2V-1sec-1. Thesource - drain current characteristics shows a tendency of current saturationat high source - drain voltage which is analyzed quantitatively by a diffusivetransport model.

Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis