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We study the effects of an attractive interaction between the boron (B) andthe nitrogen (N) atoms doped in a bilayer graphene (BLG), BC$_{14}$N, on theelectronic, the thermal and the optical properties for two different types of adoping process: First, both the B and the N atoms are doped in the same layerwhile the other layer is undoped. Second, the B and N atoms are doped in bothlayers. An attractive interaction between the B and N atoms does not influencethe interlayer interaction in the first case, while it does in the second case.We find that the strong B-N attractive interaction in one layer inducesmetallic behavior due to the crossing of the valence band and the Fermi energy,while the strong attractive interaction between both layers induces asemiconductor property arising from the emergence a bandgap. We thereforeconfirm that the metallic-like BLG is not a good material for thermal devicesbecause it has a low figure of merit, while we notice that thesemiconductor-like BLG has a high Seebeck coefficient and figure of merit aswell as a low thermal conductivity. The strong attractive interaction of theB-N atoms between the layers gives rise to a prominent peak to appear indielectric function, the excitation and the absorption spectra in the lowenergy, visible range, while a very weak peak is seen in the case of a strongattractive interaction between the B and N doped in one layer. Controlling theB and N atomic configurations in the BLG may help to improve the material foruse in both thermoelectric and optoelectronic devices.

Study of BC$_{14}$N-bilayer graphene: Effects of atomic spacing and interatomic interaction between B and N atoms