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The Seebeck coefficient in single and bilayer graphene sheets has beenobserved to be modest due to the gapless characteristic of these structures. Inthis work, we demonstrate that this coefficient is significantly high inquasi-1D structures of bilayer armchair graphene nanoribbons (BL-AGNRs) thanksto the open gaps induced by the quantum confinement effect. We show that theSeebeck coefficient of BL-AGNRs is also classified into three groups 3p, 3p +1, 3p + 2 as the energy gap. And for the semiconducting BL-AGNR of width of 12dimer lines, the Seebeck coefficient is found as high as 707 uV/K and itincreases up to 857 uV/K under the impact of the vertical electric field. Whilein the semimetallic structure of width of 14 dimer lines, the Seebeckcoefficient remarkably enhances 14 times from 40 uV/K to 555 uV/K. Moreover, itunveils an appealing result as the Seebeck coefficient always increases withthe increase of the applied potential. Such BL-AGNRs appear to be verypromising for the applications of the next generation of both electronic andthermoelectric devices applying electric gates.

Enhancement of the Seebeck effect in bilayer armchair graphene nanoribbons by tuning the electric fields