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We present results on the deposition and characterization of defectedgraphene by the chemical vapor deposition (CVD) method. The source ofcarbon/carbon-containing radicals is thermally decomposed acetone (C2H6CO) inAr main gas flow. The deposition takes place on (001) Si substrates at about1150-11600C. We established by Raman spectroscopy the presence of single- tofew- layered defected graphene deposited on two types of interlayers thatpossess different surface morphology and consisted of mixed sp2 and sp3hybridized carbon. The study of interlayers by XPS, XRD, GIXRD and SEMidentifies different phase composition: i) a diamond-like carbon dominated filmconsisting some residual SiC, SiO2 etc.; ii) a sp2- dominated film consistingsmall quantities of C60/C70 fullerenes and residual Si-O-, C=O etc. species.The polarized Raman studies confirm the presence of many single-layereddefected graphene areas that are larger than few microns in size on thepredominantly amorphous carbon interlayers.

Deposition of defected graphene on (001) Si substrates by thermal decomposition of acetone