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Design considerations for a below 100 nm channel length SOI MOSFET withelectrically induced shallow source/drain junctions are presented. Oursimulation results demonstrate that the application of induced source/drainextensions to the SOI MOSFET will successfully control the SCEs and improve thebreakdown voltage even for channel lengths less than 50 nm. We conclude that ifthe side gate length equals the main gate length, the hot electron effectdiminishes optimally.

superlattices and microstructures

Nanoscale SOI-MOSFETs with Electrically Induced Source/Drain Extension:  Novel attributes and Design considerations for Suppressed Short-channel  Effects