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Recent developments have renewed the demand for solar cells with increasedtolerance to radiation damage. To investigate the specific irradiation damageof 1 MeV electron irradiation in GaInAsP lattice matched to InP for varying Inand P contents, a simulation based analysis is employed: by fitting the quantumefficiency and open-circuit voltage simultaneously before and afterirradiation, the induced changes in lifetime are detected. Furthermore, thereduction of irradiation damage during regeneration under typical satelliteoperating conditions for GEO missions (60{\deg}C and AM0 illumination) isinvestigated. A clear decrease of the radiation damage is observed after postirradiation regeneration. This regeneration effect is stronger for increasingInP-fraction. It is demonstrated that the irradiation induced defectrecombination coefficient for irradiation with 1 MeV electrons afterregeneration for 216 hours can be described with a linear function ofInP-fraction between 1*10$^{-5}$ cm$^2$/s for GaAs and 7*10$^{-7}$ cm$^2$/s forInP. The results show that GaInAsP is a promising material for radiation hardspace solar cells.

Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells