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We report on the effect of electron and proton irradiation on effectiveminority carrier lifetimes (${\tau}_{eff}$) in p-type Ge wafers. Minoritycarrier lifetimes are assessed using the microwave-detected photoconductancedecay (${\mu}$W-PCD) method. We examine the dependence of ${\tau}_{eff}$ on thep-type doping level and on electron and proton radiation fluences at 1 MeV. Themeasured ${\tau}_{eff}$ before and after irradiation are used to estimate theminority carriers diffusion lengths, which is an important parameter for solarcell operation. We observe ${\tau}_{eff}$ ranging from 50 to 230 ${\mu}$s forGe doping levels between 1E17 and 1E16 at.cm$^{-3}$, corresponding to diffusionlengths of 500-1400 ${\mu}$m. A separation of ${\tau}_{eff}$ in Ge bulklifetime and surface recombination velocity is conducted by irradiating Gelifetime samples of different thicknesses. The possible radiation-induceddefects are discussed on the basis of literature.

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics