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SiN x : Tb 3+-Yb 3+, an efficient down-conversion layer compatible withsilicon solar cell process Abstract Tb 3+-Yb 3+ co-doped SiN x down-conversionlayers compatible with silicon Photovoltaic Technology were prepared byreactive magnetron co-sputtering. Efficient sensitization of Tb 3+ ions througha SiN x host matrix and cooperative energy transfer between Tb 3+ and Yb 3+ions were evidenced as driving mechanisms of the down-conversion process. Inthis paper, the film composition and microstructure are investigated alongsidetheir optical properties, with the aim of maximizing the rare earth ionsincorporation and emission efficiency. An optimized layer achieving the highestYb 3+ emission intensity was obtained by reactive magnetron co-sputtering in anitride rich atmosphere for 1.2 W/cm${}^2$ and 0.15 W/cm${}^2$ power densityapplied on the Tb and Yb targets, respectively. It was determined thatdepositing at 200 {\textdegree}C and annealing at 850 {\textdegree}C leads tocomparable Yb 3+ emission intensity than depositing at 500 {\textdegree}C andannealing at 600 {\textdegree}C, which is promising for applications towardsilicon solar cells.

SiNx:Tb3+--Yb3+, an efficient down-conversion layer compatible with a silicon solar cell process