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Boron and Silicon site occupancies of the T2 phase in the Cr-Si-B system wereinvestigated experimentally and by first-principles electronic-structurecalculations within the scope of the Density Functional Theory (DFT). A samplewith nominal composition Cr$_{0.625}$B$_{0.175}$Si$_{0.2}$ was arc-melted underargon, encapsulated in a quartz-tube and heat-treated at 1400{\deg}C for 96hours. It was then analyzed using Scanning Electron Microscopy (SEM) and X-RayDiffractometry (XRD) with synchrotron radiation. An excellent agreement wasobtained between experiments and theoretical calculations, revealing that Sioccupies preferably the $4a$ sublattice of the structure due to the presence ofweak B bonds, making the site preferences a key factor for its stabilization.The results of this work provide important information to support a betterdescription of this phase in alloys with Si and B, since T2 phases are known tooccur in many important Transition Metal-Si-B ternary systems, such asNb/Mo/W/Ta/V-Si-B.

T2 phase site occupancies in the Cr--Si--B system: a combined synchroton-XRD/first-principles study