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Automatic switch is an automatic electrical device that uses sensor technology to detect movement, or body temperature that was detected in the switch. The sensor uses passive infra-red receiver (PIR) by using lithium tantalite (LiTaO3) that will capture a moment as a response in temperature changes. In this research, we synthesized a thin film of lithium tantalite (LiTaO3) on a substrate silicon p-type. The film was produced by chemical solution deposition (CSD) and engineering spin coatings with temperature annealing on 550°C, 600°C, 650°C, 700°C, 750°C and 800°C with 3000rpm in speed for around 30seconds. The value of high absorbent showed that the LiTaO3 film has a large number of photon energy. This research obtained the energy band-gap film LiTaO3 in the range 3.41-4.56eV. This result concludes that annealed temperatures affects the optical properties of the LiTaO3 film in the substrate of Si (100) p-type semiconductor. The sensitivity of this high intensity absorbent for energy and high value of band-gap is great and is therefore potential to be used prospectively for the automatic switch sensor on the satellite platform

Development of Lithium Tantallite (LiTaO3) for Automatic Switch on LAPAN-IPB Satellite Infra-red Sensor