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Commonly optical high voltage sensors employ the Pockels effect in a bulk electro-optic crystal such as Bi4Ge3O12 (BGO). Typically, the maximum crystal length is 100-200mm and determined by the limits of the conventional growth technique (Czochralski). In this paper we report on the growth by a micro-pulling down technique of long single crystalline BGO fibers as an alternative to bulk crystals and their characterization for voltage sensing. The fiber thickness may range from a few 100μm to a few mm. The parameters needed for stable growth over the entire length of the crystal were analyzed and optimized. Thin rods with a length of up to 850mm were grown. Samples were characterized with respect to homogeneity of growth, residual birefringence (BGO is free of natural birefringence), crystal orientation, and performance under voltage

Crystalline Bi4Ge3O12 fibers fabricated by micro-pulling down technique for optical high voltage sensing