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Single-molecule memory device based on a single-molecule magnet (SMM) is oneof the ultimate goals of semiconductor nanofabrication technologies. Here, westudy how to manipulate and readout the SMM's two spin-state of storedinformation that characterized by the maximum and minimum average value of the$Z$-component of the total spin of the SMM and the conduction-electron, whichare recognized as the information bits "$1$" and "$0$". We demonstrate that theswitching time depends on both the sequential tunneling gap $\varepsilon_{se}$and the spin-selection-rule allowed transition-energy $\varepsilon_{trans}$,which can be tuned by the gate voltage. In particular, when the external biasvoltage is turned off, in the cases of the unoccupied and doubly-occupiedground eigenstates, the time derivative of the transport current can be used toread out the SMM's two spin-state of stored information. Moreover, thetunneling strength of and the asymmetry of the SMM-electrode coupling have astrong influence on the switching time, but that have a slight influence on thereadout time that being on the order of nanoseconds. Our results suggest aSMM-based memory device, and provide fundamental insight into the electricalcontrollable manipulation and readout of the SMM's two spin-state of storedinformation.

Manipulation and readout of spin states of a single-molecule magnet by a spin-polarized current