English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Tens of graphene transistors with nanoperforated channels and differentchannel lengths were fabricated at the wafer scale. The nanoholes have acentral diameter of 20 nm and a period of 100 nm, the lengths of the channelbeing of 1, 2, 4 or 8 micrometers. We have found that the mobility in these 2micrometer-wide transistors varies from about 10400 cm2/Vs for a channel lengthof 1 micrometer to about 550 cm2/Vs for a channel length of 8 micrometer.Irrespective of the mobility value, in all transistors the on-off ratio is inthe range 10^3-10^4 at drain and gate voltages less than 2 V. The channellength-dependent mobility and conductance values indicate the onset of stronglocalization of charge carriers, whereas the high on-off ratio is due tobandgap opening by nanoperforations.

Solving the graphene electronics conundrum: high mobility and high on-off ratio in graphene nanopatterned transistors