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Within the effective mass approximation and variational method the effect ofdielectric constant mismatch between the size-quantized semiconductor sphere,coating and surrounding environment on impurity binding energy in both theabsence and presence of a magnetic field is considered. The dependences of thebinding energy of a hydrogenic on-center impurity on the sphere and coatingradii, alloy concentration, dielectric-constant mismatch, and magnetic fieldintensity are found for the GaAs-Ga_(1-x)Al_(x)As-AlAs (or vacuum) system.

Effect of the Dielectric-Constant Mismatch and Magnetic Field on the Binding Energy of Hydrogenic Impurities in a Spherical Quantum Dot