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Reverse and stable bipolar resistive switching effect was observed in planarNdCeCuO - NdCeO - Ag heterostructures. It was shown that the current voltagecharactereriscs of the BRSE observed has a diode character. Simulations wereused to consider the influence of the nonuniform distribution of an electricfield at the interface of a heterojunction on the effect of bipolar resistiveswitching in investigated structures. The inhomogeneous distribution of theelectric field near the contact edge creates regions of higher electric fieldstrength which, in turn, stimulates motion and redistribution of defects,changes of the resistive properties of the whole structure and formation of apercolation channel.

NdCeCuO - NdCeO boundary and resistive switchings in mesoscopic structures on base of epitaxial NdCeCuO films