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A series of c-axis oriented electron-doped high-Tc superconductingLa(2-x)CexCuO4 thin films, from heavily underdoped x=0.06 to heavily overdopedx=0.19, have been synthesized by dc magnetron sputtering technique on (100)SrTiO3 substrates. The influence of various fabrication conditions, such as thedeposition temperature and the deposition rate, etc., on the quality of thethin films has been scrutinized. We find that the quality of the films is lesssensitive to the deposition temperature in the overdoped region than that inthe underdoped region. In the phase diagram of Tc(x), the superconducting domeindicates that the optimally doping level is at the point x=0.105 with thetransition temperature Tc0 = 26.5 K. Further more, both the disappearance ofthe upturn in the $\rho_{xx}$(T) curve at low temperature under H=10 T and thepositive differential Hall coefficient, $R_H'=d \rho_{xy}/dH$, are observedaround x = 0.15, implying a possible rearrangement of Fermi surface at thisdoping level.

Preparation of electron-doped La(2-x)CexCuO4 thin films with various Ce doping by dc magnetron sputtering