English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Open

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Relations for the optimum well width, barrier width and width of the spacerlayer to achieve highest PVCR on the basis of effective mass and barrier heightin RTDs is proposed. The optimum spacer layer is found to be half of thede-Broglie wavelength associated with the bound state of the correspondingfinite quantum well. The proposed relations for the optimum parameters can beused to design RTD based on any two appropriate materials to attain highestPVCR. The effect of doping concentrations on PVCR and peak current was studied.As case study, we have considered the GaAs/Ga0.7Al0.3As and GaN/Ga0.7Al0.3NRTDs. The current density obtained using the tunneling coefficient based ontransfer matrix approach takes in to account the variation in the electricfield in the well and barrier region on account of variation in the dielectricconstant in the material.

Simulation of Optimum values of device parameters to attain Peak to Valley current Ratio (PVCR) in Resonant tunneling diodes (RTD)