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Wide-bandgap perovskite stannates are of interest for the emergent all-oxidetransparent electronic devices due to their unparalleled room temperatureelectron mobility. Considering the advantage of amorphous material inintegrating with non-semiconductor platforms, we herein reported the opticaland electronic properties in the prototypical stannate, amorphous bariumstannate (BaSnO3) thin films, which were deposited at room temperature andannealed at various temperatures. Despite remaining amorphous status, withincreasing the annealing temperature, the defect level within amorphous BaSnO3thin films could be suppressed.

Optical and electronic properties in amorphous BaSnO3 thin films