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Disorder driven superconductor to insulator transition via intermediatemetallic regime is reported in nano-crystalline thin films of molybdenum. Thenano-structured thin films have been deposited at room temperature using DCmagnetron sputtering at different argon pressures. The grain size has beentuned using deposition pressure as the sole control parameter. A variation ofparticle sizes, room temperature resistivity and superconducting transition hasbeen studied as a function of deposition pressure. The nano-crystallinemolybdenum thin films are found to have large carrier concentration but verylow mobility and electronic mean free path. Hall and conductivity measurementshave been used to understand the effect of disorder on the carrier density andmobilities. Ioffe-Regel parameter is shown to correlate with the continuousmetal-insulator transition in our samples.

Enhanced superconductivity and superconductor to insulator transition in nano-crystalline molybdenum thin films