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The structural, elastic, electronic and optical (x = 0) properties of dopedSn1-xBixO2 and Sn1-xTaxO2 (0 \leq x \leq 0.75) are studied by using thefirst-principles pseudopotential plane-wave method within the local densityapproximation. The independent elastic constants Cij and other elasticparameters of these compounds have been calculated for the first time. Themechanical stability of the compounds with different doping concentrations hasalso been studied. The electronic band structure and density of states arecalculated and the effect of doping on these properties is also analyzed. It isseen that the band gap of the undoped compound narrowed with dopantconcentration which disappeared for x = 0.26 for Bi doping and 0.36 for Tadoping. The materials thus become conductive oxides through the change in theelectronic properties of the compound for x \leq 0.75 which may be useful forpotential application. The calculated optical properties, e.g. dielectricfunction, refractive index, absorption spectrum, loss-function, reflectivityand conductivity of the undoped SnO2 in two polarization directions arecompared with both previous calculations and measurements.  Keywords: Doped SnO2; First-principles; Mechanical properties; Electronicband structure; Optical properties.

Sn1-xBixO2 and Sn1-xTaxO2 (0 \leq x \leq 0.75): A first-principles study